Hydrogenated amorphous silicon alloy deposition processes

  • 327 Pages
  • 3.75 MB
  • 4177 Downloads
  • English
by
M. Dekker , New York
Thin film devices -- Design and construction., Silicon alloys., Plasma-enhanced chemical vapor deposition., Thin films -- Optical properties., Thin films -- Electric proper
StatementWerner Luft, Y. Simon Tsuo.
SeriesApplied physics ;, 1, Applied physics series (Marcel Dekker, Inc.) ;, 1.
ContributionsTsuo, Y. Simon.
Classifications
LC ClassificationsTK7872.T55 L84 1993
The Physical Object
Paginationxiv, 327 p. :
ID Numbers
Open LibraryOL1410218M
ISBN 100824791460
LC Control Number93018931

This reference reviews common film and plasma diagnostic techniques and the deposition and film properties of various hydrogenated amorphous silicon alloys (a-Si:H).;Drawing heavily from studies on a-Si:H solar cells and offering valuable insights into other semiconductor applications of a-Si:H and related alloys, Hydrogenated Amorphous Silicon Alloy Deposition Processes: describes Cited by: Film Diagnostic Measurements -- 4.

Conventional Glow Discharge Deposition Processes for Amorphous Silicon-Based Alloys -- 5. Design of Glow Discharge Deposition Reactors -- 6. Glow Discharge Deposition Parameters for Hydrogenated Amorphous Silicon -- 7.

Glow Discharge Deposition Reaction Chemistry for Hydrogenated Amorphous Silicon -- 8. Hydrogenated amorphous silicon (a-Si:H) is a suitable material for the realization of planar waveguides to route and modulate the optical signal. a-Si:H can be deposited by plasma-enhanced chemical-vapor deposition (PECVD) on almost any substrate at temperatures below °C, thus preserving compatibility with any microelectronic technology.

Plasma Deposition of Amorphous Silicon-Based Materials is a timely, comprehensive reference book written by leading authorities in the field. This volume links the fundamental growth kinetics involving complex plasma chemistry with the resulting semiconductor film properties and the subsequent effect on the performance of the electronic devices.

Plasma-assisted chemical vapor deposition (CVD), also known as glow discharge deposition, has become the most common technique used in the deposition of hydrogenated amorphous silicon (a. Hydrogenated Amorphous Silicon Alloy Deposition Processes (Applied Physics), By Werner Luft, Y.

Simon Tsuo. It is the time to improve and also freshen your skill, understanding and also encounter included some home entertainment for you after very long time with monotone things.

[7] Methylated amorphous silicon is a material parented to hydrogenated amorphous silicon (a-Si:H). a-Si:H deposition processes have been optimized in order to produce device-grade material, with.

When adjusting the hydrogenated amorphous silicon alloy by deposition of a conventional deposition chamber, the deposition gas mixture, such as methane (CH 4), germane (germanium hydride -GeH 4), tetrafluoroboric germanium (GeF 4), for example digermane higher order, such as (Ge 2 H 6) germane, such as diborane (B 2 H 6) or phosphine (PH 3.

Luft, W.

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and Y. Simon Tsuo, Hydrogenated amorphous silicon alloy deposition processes, Applied Physics Series 1 (Marcel Dekker, Inc., New York, Basel, Hong Kong, ). Molenbroek, E.C., Deposition of hydrogenated amorphous silicon with the hot-wire Zeman M. () Deposition of Amorphous and Microcrystalline Silicon.

In: Amorphous and Cited by: 3. @article{osti_, title = {Photoelectronic properties of hydrogenated amorphous silicon films deposited by R. F sputtering and glow discharge methods}, author = {Abdel-Rahman, M. and Madkour, H. and Hassan, H.H.

and El-Desouki, S.}, abstractNote = {Hydrogenated amorphous silicon films a-Si:H were deposited by both R.F. sputtering in a planar magnetron configuration and glow discharge.

Hydrogenated amorphous silicon-chalcogen alloy thin films have been the subject of growing interest during the past two decades. Thin films of these alloys are usually prepared by the decomposition of SiH4 and H2S or H2Se gas mixtures in a radiofrequency plasma glow discharge at a substrate temperature of °C.

The alloy composition is varied by changing the gas volume ratio RV = [chalcogen Author: Shawqi Al Dallal. It discusses the basics of a few deposition methods as they apply to industrially relevant coatings.

Details Hydrogenated amorphous silicon alloy deposition processes FB2

The methods include deposition of tungsten-containing hydrogenated amorphous carbon films, deposition of tetrahedral amorphous carbon films, and deposition of silicon. a-Si a-Si:H film a-Si:H layer a-Si:H TFT active matrix alloy Amorphous Silicon annealing Appl Phys applications atoms band gap band tail bias capacitance capacitor Cat-CVD channel length charge Chemical Vapor Deposition circuit conduction band contact resistance crystalline dangling bonds data line density device display doping drain effect 5/5(1).

An in situ method based on attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR) is presented for detecting surface silicon hydrides on plasma deposited hydrogenated amorphous silicon (a-Si:H) films and for determining their surface concentrations.

Surface silicon hydrides are desorbed by exposing the a-Si:H films to low energy ions from a low density Ar plasma and by Cited by: Silicon is a chemical element with the symbol Si and atomic number It is a hard, brittle crystalline solid with a blue-grey metallic lustre, and is a tetravalent metalloid and is a member of group 14 in the periodic table: carbon is above it; and germanium, tin, and lead are below it.

It is relatively unreactive. Because of its high chemical affinity for oxygen, it was not Pronunciation: /ˈsɪlɪkən/ ​(SIL-ə-kən). Stutzmann, W. Jackson, and C. Tsai. Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study.

Phys. Rev. B 32, 23–47 () Annealing of Metastable Defects in Hydrogenated Amorphous Silicon This paper uses electron spin resonance to understand how the metastable properties of amorphous silicon work.

You can write a book review and share your experiences. Other readers will always be interested in your opinion of the books you've read. Whether you've loved the book or not, if you give your honest and detailed thoughts then people will find new books that are right for them. Near-infrared brain imaging technology has great potential as a non-invasive, real-time inspection technique.

Silicon-tin (SiSn) alloy films could be a promising material for near-infrared brain detectors. This study mainly reports on the structure of amorphous silicon tin alloy thin films by Raman spectroscopy to investigate the influence of doped-Sn on an a-Si : Xiang-Dong Jiang, Ming-Cheng Li, Rui-Kang Guo, Ji-Min Wang.

A comprehensive study of multilayer structures made of hydrogenated and fluorinated amorphous silicon and its alloy with germanium, a‐Si:H,F/a‐Si,Ge:H,F, is reported. After briefly describing the deposition process and the chemical composition of the samples, the optical and the electronic properties of the multilayers are concentrated on.

Raman scattering spectra suggest mixing over a 1 Cited by: @article{osti_, title = {Amorphous semiconductor technologies and devices}, author = {Hamakawa, Y}, abstractNote = {This volume presents an overview of the recent progress in the field of amorphous silicon and its alloys, demonstrating the strong potential need for a low-cost solar cell in the photovoltaic project and other new application fields.

Local Structure of Dopants in Hydrogenated Amorphous Silicon (J B Boyce & S E Ready) Plasma Deposition of Amorphous and Crystalline Silicon: The Effect of Hydrogen on the Growth, Structure Electronic Properties (C C Tsai) Defects and Defect Dynamics: Thermal Equilibrium Effects in Doped Hydro-genated Amorphous Silicon (J Kakalios & R A Street).

Flewitt AJ, Lin S, Milne WI, Wehrspohn RB, Powell MJ () Mechanisms for defect creation and removal in hydrogenated and deuterated amorphous silicon studied using thin film transistors.

Mater Res Soc Symp Proc –A Google ScholarAuthor: S. Brotherton. Theoretical studies of amorphous silicon and hydrogenated amorphous silicon with molecular dynamics simulations Inhee Kwon Iowa State University Follow this and additional works at: Part of theCondensed Matter Physics Commons.

Cationic silicon clusters Si n H m + with up to ten silicon atoms have been detected mass spectrometrically in an expanding argon–hydrogen–silane plasma used for fast deposition of amorphous hydrogenated by: Chemical vapor deposition (CVD) is a technique for the fabrication of thin films of polymeric materials, which has successfully overcome some of the issues faced by wet chemical fabrication and other deposition methods.

There are many hybrid techniques, which arise from CVD and are constantly evolving in order to modify the properties of the fabricated thin by: 4.

R. Biswas and B. Pan, “Mechanisms for metastability in amorphous silicon”, Book chapter, Solar Energy and Materi (). Critical review of amorphous and microcrystalline silicon materials and solar cells. This study aimed to develop hydrogenated amorphous carbon thin films with embedded metallic nanoparticles (a–C:H:Me) of controlled size and concentration.

Towards this end, a novel hybrid deposition system is presented that uses a combination of Plasma Enhanced Chemical Vapor Deposition (PECVD) and Physical Vapor Deposition (PVD) technologies.

Description Hydrogenated amorphous silicon alloy deposition processes FB2

Amorphous Silicon/Crystalline Silicon Solar Cells deals with some typical properties of heterojunction solar cells, such as their history, the properties and the challenges of the cells, some important measurementtools, some simulation programs and a brief survey of the state of the art, aiming to provide an initial framework in this field and serve as a ready reference for all those.

A novel dual ion beam sputtering process for depositing thin films of high density is described. One of the ion beams contains relatively heavy sputtering ions, such as argon ions, for ejecting atoms from a target. The second ion beam is also directed at the target and contains ions having energies of at least 3 electron volts and less than 20 electron by:   It is well-known that hydrogenated amorphous silicon germanium (a-SiGe:H) and hydrogenated nanocrystalline silicon (nc-Si:H) possess a higher absorption coefficient in the long wavelength region Cited by: 3.

Handbook of Thin Film Deposition Processes and Techniques: Principles, Methods, Equipment and Applications, Second Edition. Including much cutting-edge material, this book traces the technology behind the spectacular growth in the silicon semiconductor industry and the continued trend.The deposition flux can be calculated from the deposition rate and the molecular density.

Let's take an example: for deposition of silicon dioxide at Å/minute, the molecular flux to the surface is x10 15 molecules/cm 2 second; this is equivalent to an electric current (of .Progress in Amorphous Silicon Based Solar Cell Technology.

As the negative environmental effects of the current use of non-renewable energy sources have become apparent, hydrogenated amorphous silicon (a-Si:H) solar cell technology has advanced to provide .